Spin heat accumulation induced by tunneling from a ferromagnet.
نویسندگان
چکیده
An electric current from a ferromagnet into a nonmagnetic material can induce a spin-dependent electron temperature. Here, it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the coexisting electrical spin accumulation and can give a different Hanle spin precession signature. The effect is governed by the spin polarization of the Peltier coefficient of the tunnel contact, its Seebeck coefficient, and the spin heat resistance of the nonmagnetic material, which is related to the electrical spin resistance by a spin-Wiedemann-Franz law. Moreover, spin heat injection is subject to a heat conductivity mismatch that is overcome if the tunnel interface has a sufficiently large resistance.
منابع مشابه
Tunnel-barrier-enhanced dc voltage signals induced by magnetization dynamics in magnetic tunnel junctions
We theoretically study the recently observed tunnel-barrier-enhanced dc voltage signals generated by magnetization precession in magnetic tunnel junctions. While the spin pumping is suppressed by the high tunneling impedance, two complementary processes are predicted to result in a sizable voltage generation in ferromagnet F insulator I normal metal N and F I F junctions with one ferromagnet be...
متن کاملSpin-Flip Scattering Effect on the Current-Induced Spin Torque in Ferromagnet-Insulator-Ferromagnet Tunnel Junctions
We have investigated the current-induced spin transfer torque of a ferromagnet-insulator-ferromagnet tunnel junction by taking the spin-flip scatterings into account. It is found that the spin-flip scattering can induce an additional spin torque, enhancing the maximum of the spin torque and giving rise to an angular shift compared to the case when the spin-flip scatterings are neglected. The ef...
متن کاملSpin-dependent Trap-assisted Tunneling in Ferromagnet-Oxide-Semiconductor Structures
Silicon is an ideal material for spintronic applications due to its weak spin-orbit interaction and long spin lifetime [1,2]. Spin injection from a ferromagnetic electrode into n-type silicon was claimed at room [3] and elevated [4] temperatures. However, the amplitude of the spin-accumulation signal extracted from a three-terminal injection method [2,3] is orders of magnitude higher than predi...
متن کاملThe Meservey-Tedrov effect in FSF double tunneling junctions
Double tunneling junctions of ferromagnet-superconductor-ferromagnet electrodes (FSF) show a jump in the conductance when a parallel magnetic field reverses the magnetization of one of the ferromagnetic electrodes. This change is generally attributed to the spin-valve effect or to pair breaking in the superconductor because of spin accumulation. In this paper it is shown that the Meservey-Tedro...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical review letters
دوره 112 5 شماره
صفحات -
تاریخ انتشار 2014